Emerson 5D32207G01 Power Module

Emerson 5D32207G01 Power Module

Brand: Emerson

Module: 5D32207G01

Description: Power Module

Country: USA

The proportion of power electronic devices 0 is 0 of the two major characteristics of the new power system, such as the international leading flexible DC transmission technology in the fields of new energy grid connection, offshore wind power transmission and extra zero voltage, which is a combination of power electronics, power systems, communication principles and other aspects of zero technology. The modularized multilevel converter, DC circuit breaker and DC transformer based on power electronics technology are the key equipment of DC power grid construction. High-capacity semiconductor devices are the core components of building these key equipment, and low-cost, low-loss and reliable high-capacity semiconductor devices are crucial to improving the economy and security of DC power grid equipment. In high-power power electronic devices, IGBT (0 edge gate bipolar transistor) is currently mainly used, IGCT (integrated gate into gate commutated thyristor) is a more potential semiconductor device, the market is mainly occupied by foreign enterprises such as Switzerland ABB, Germany Infineon, the United States GE, and domestic alternative space is broad.

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