GE IS200DAMAG1A: General Electric’s Advanced Insulator-Gate Bipolar Transistor, Designed for High-Performance Applications

Model:IS200DAMAG1A

Brand:General Electric

Series:Mark VI

Function:Insulator-Gate Bipolar Transistor

Dimension (WxHxD):Width x Height x Depth (mm)

Weight:0.14 kg

Material:High-grade copper and epoxy resin

Operating Voltage:Rated voltage (V)

Current Capacity:Max current capacity (A)

Temperature Range:-40°C to +85°C

Certification:CE, UL

    The GE IS200DAMAG1A is meticulously engineered for high-performance operation in the most demanding industrial environments.

    Featuring a robust design, this PCB is specifically tailored for use in GE’s Mark VI excitation control systems, ensuring seamless integration and optimal system performance.

    With its compact size and lightweight construction, the IS200DAMAG1A is easy to install and maintain, contributing to reduced downtime and increased efficiency.

    Crafted from high-grade copper and epoxy resin, the PCB offers superior electrical conductivity and mechanical strength, ensuring long-lasting reliability.

    Certified to meet international safety standards (CE, UL), the IS200DAMAG1A ensures a safe and reliable operation in various industrial applications, backed by General Electric’s commitment to quality and innovation.