SIEMENS 6SL3912-5EP38-0AA0 IGBT MODULENEUTRAL POINT DIODE POWERCARD. The development of IGBTs involved efforts to suppress the latch-up of the parasitic thyristor, which can cause device failure. The concept of non-latch-up IGBTs, where the saturation current is limited to below the latch-up current, was introduced in 1984.Siemens IGBTs are a type of power transistor that offer a fast and efficient solution for controlling the flow of energy. They are known for their ability to handle high voltage and large current simultaneously, making them suitable for a wide range of applications.
SIEMENS 6SL3912-5EP38-0AA0 IGBT MODULE
SIEMENS 6SL3912-5EP38-0AA0 IGBT MODULE
SIEMENS 6SL3912-5EP38-0AA0 IGBT MODULE
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